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1
High frequency MOSFET gate drivers : technologies and applications
London : The Institution of Engineering and Technology, 2017Format: Electronic eBookFull text (Wentworth users only)
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2
Advanced MOS devices and their circuit applications
Boca Raton : CRC Press, 2024
First edition.Format: Electronic eBookFull text (WIT users only)
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3
Mosfet modeling for VLSI simulation : theory and practice
New Jersey : World Scientific, 2007Format: Electronic eBookFull text (Emerson users only)
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4
Strained-Si heterostructure field effect devices
Boca Raton : CRC Press, 2007Format: Electronic eBookFull text (WIT users only)
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5
Compact MOSFET models for VLSI design
Singapore ; Hoboken, NJ : [Piscataway, NJ] : John Wiley & Sons (Asia) ; IEEE Press, 2009Format: Electronic eBookFull text (Wentworth users only)
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6
Fundamentals of nanoscaled field effect transistors
New York, NY : Springer, 2013Format: Electronic eBookFull text (Wentworth users only).
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7
Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
Dordrecht : Springer, 2013Format: Electronic eBookFull text (Wentworth users only)
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8
Leakage Current and Defect Characterization of Short Channel MOSFETs.
Berlin : Logos Verlag Berlin, 2012Format: Electronic eBookFull text (Emerson users only)
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9
Defects in microelectronic materials and devices
Boca Raton : CRC Press, 2009Format: Electronic eBookFull text (WIT users only)
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10
The physics and modeling of MOSFETS surface-potential model HiSIM
Singapore ; Hackensack, NJ : World Scientific, 2008Format: Electronic eBookAccess E-Book
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11
MOSFET modeling for circuit analysis and design
Singapore ; Hackensack, NJ : World Scientific, 2007Format: Electronic eBookFull text (Emerson users only)
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12
CMOS circuit design, layout, and simulation
Hoboken, New Jersey : The Institute of Electrical and Electronics Engineers, Inc. : Wiley, 2019
Fourth Edition.Format: Electronic eBookFull text (Wentworth users only)
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13
The physics and modeling of MOSFETS : surface-potential model HiSIM
Singapore ; Hackensack, N.J. : World Scientific Pub., 2008Format: Electronic eBookFull text (Emerson users only)
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14
Vibrational properties of defective oxides and 2D nanolattices : insights from first-principles simulations
Cham, Switzerland : Springer, 2014Format: Electronic eBookFull text (Wentworth users only)
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15
Strained-Si heterostructure field effect devices
New York : Taylor & Francis, 2007Format: Electronic BookFull text (Wentworth users only)
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16
Advanced nanoscale MOSFET architectures : current trends and future perspectives
Hoboken, NJ : Wiley : IEEE Press, 2024Format: Electronic eBookFull text (Wentworth users only)
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17
Nanometer CMOS
Singapore : Pan Stanford Pub., 2010Format: Electronic eBookFull text (WIT users only)
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18
Floating body cell a novel capacitor-less DRAM cell
[Singapore] : Boca Raton, FL : Pan Stanford ; CRC Press, 2012Format: Electronic eBookFull text (Wentworth users only)
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19
MOSFET modeling for circuit analysis and design
Singapore ; Hackensack, NJ : World Scientific, 2007Format: Electronic eBookAccess E-Book
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20
Leakage current and defect characterization of short channel MOSFETs
Berlin : Logos Verlag Berlin, 2014Format: Electronic eBookAccess E-Book